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VRRM IF(AV)M IFSM V(T0) rT VDC-link
= = = = = =
4500 1400 25x103 1.2 0.32 2200
V A A V m V
Fast Recovery Diode
5SDF 14H4505
Doc. No. 5SYA1110-02 Oct. 06
* Patented free-floating silicon technology * Low on-state and switching losses * Optimized for use as freewheeling diode in GTO converters with low DC-link voltages * Industry standard housing * Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate
Characteristic values
Symbol Conditions VRRM VDC-link f = 50 Hz, tp = 10ms, Tvj = 125C, Note 1 Ambient cosmic radiation at sea level in open air. (100% Duty) min typ
Value 4500 2200
Unit V V
Parameter Repetitive peak reverse current
Symbol Conditions IRRM VR = VRRM, Tvj = 125C
max 50
Unit mA
Note 1: Voltage de-rating factor of 0.11% per C is applicable for Tvj below 0 C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions Fm a a Device unclamped Device clamped
min 36
typ 40
max 44 50 200
Unit kN m/s m/s Unit kg mm mm mm
2 2
Parameter Weight Housing thickness Surface creepage distance Air strike distance
Symbol Conditions m H DS Da
min 25.9 30 20
typ
max 0.83 26.4
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDF 14H4505
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 2500 A, Tvj = 125C Tvj = 125C IF = 400...4000 A tp = 1 ms, Tvj = 125C, VR = 0 V tp = 10 ms, Tvj = 125C, VR = 0 V Half sine wave, TC = 85 C
min
typ
max 1400 2200 25x10
3
Unit A A A A2s A A2s Unit V V m
3.13x10 60x10
6 3
1.8x10 min typ max 2 1.2 0.32
6
Parameter On-state voltage Threshold voltage Slope resistance
Turn-on
Characteristic values
Parameter Peak forward recovery voltage
Symbol Conditions VFRM dIF/dt = 500 A/s, Tvj = 125C
min
typ
max 30
Unit V
Turn-off
Characteristic values
Parameter Reverse recovery current Reverse recovery charge Turn-off energy
Symbol Conditions IRM Qrr Err di/dt = 300 A/s, IFQ = 1000 A, Tj = 125C, VRM = 4500 V, CS = 3 F (GTO snubber circuit)
min
typ
max 1000 3700 1.6
Unit A C J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 2 of 7
5SDF 14H4505
Thermal
Maximum rated values
1)
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions Tvj
min -40 -40 min
typ
max 125 125
Unit C C Unit K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 36...44 kN Anode-side cooled Fm = 36...44 kN Cathode-side cooled Fm = 36...44 kN Double-side cooled Fm = 36...44 kN Single-side cooled Fm = 36...44 kN
typ
max 12 24 24 3 6
Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
Analytical function for transient thermal impedance:
Zth(j-c) (t) = R th i (1 - e-t/ i )
i =1
i Rth i(K/kW) i(s) 1 7.440 0.4700 2 2.000 0.0910 3 1.840 0.0110 4 0.710 0.0047 Fig. 1 Transient thermal impedance junction-to-case
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 3 of 7
5SDF 14H4505
5000 25C 125C 4000 IF (A) 3000 typ. max.
2000
1000
0 0
1
2 VF (V)
3
4
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Surge on-state current vs. pulse length. Halfsine wave
Fig. 4 Upper scatter range of turn-off energy per pulse vs. turn-off current
Fig. 5 Upper scatter range of turn-off energy per pulse vs reverse current rise rate
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 4 of 7
5SDF 14H4505
Fig. 6 Upper scatter range of repetitive reverse recovery charge vs reverse current rise rate.
Fig. 7 Upper scatter range of reverse recovery current vs reverse current rise rate
Fig. 8 Forward recovery vs. turn on di/dt (max. values)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 5 of 7
5SDF 14H4505
VF(t), IF (t) dIF/dt VFR IF (t) IF (t) -dIF/dt
QRR VF (t) tfr tfr (typ) 10 s IRM VR (t) VF (t) IR (t) t
VRM
Fig. 9 General current and voltage waveforms
Li
IF VDC-link DUT CS DS RS LLoad
Fig. 10 Test circuit.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 6 of 7
5SDF 14H4505
Fig. 11 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise
Related documents:
Doc. Nr 5SYA 2036 5SZK 9104 5SZK 9105 Titel Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1110-02 Oct. 06

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